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Silicon Wafer - SOI Silicon Wafer

Silicon Wafer - SOI Silicon Wafer

Product description:    

Silicon Wafer - SOI Silicon Wafer    

1. Diameter: 4~8 inches    

2. Bonding process SOI and Smart cut process SOI can be provided   

3. The thickness of the device layer can be as thin as 150nm, and the thickness of the buried oxide layer can be as thin as 1um

4. SOI silicon wafer is silicon on insulating substrate. This technology introduces a buried oxide layer between the top silicon and the back substrate. It can be customized according to the parameters of the device layer, buried oxide layer, and bulk silicon material required by the user, as well as the customization of multi-layer SOI    





Contact: Mike

Phone: +86-19820819249

Tel: +86-19820819249

Email: nanofab@diaotuotech.com

Add: 1807, Block B, Jingang Center, Jingang Building, Heye Community, Xixiang Street, Bao'an District, Shenzhen