Electron beam lithography
Typdzse: EBPG 5150
Manufacturer:RAITH (Germany)

Specification

Acceleration Voltage ：≤100kV;

Minimum linewidth：≤8nm;

Beam current：50pA-100nA;

Minimum beam size：≤1.7nm

Scanning rate：100MHz;

Writing Field：100um²，500um²；

Stitching error：≤10nm;

Maximum substrate size：≤ 155mm ；

SEM imaging：dual channel SED，BSD；