Electron beam lithography (EBL)

Type:  ELS-F125G8

Manufacturer: Elionix (Japan)

Specification

Acceleration Voltage ：≤125kV;

Minimum linewidth：≤8nm;

Beam current：50pA-15nA;

Minimum beam size：≤1.7nm

Scanning rate：100MHz;

Writing Field：100um²，500um²；

Stitching error：≤10nm;

Maximum substrate size：≤210mm²；

SEM imaging：dual channel SED，BSD；