Wafer Defect Detector

A device used for wafer defect scanning and microscopic observation. For GaN (gallium nitride) power devices and HB GaN (high-brightness gallium nitride) LED applications, it can detect surface defects and fluorescent defects of GaN substrates as well as epitaxial wafers such as PSS-based GaN, Si-based GaN, and SiC-based GaN. The minimum detectable particle size is 81 nm. Additionally, it can distinguish between various surface and fluorescent defects, including particles, pits, bumps, scratches, stains, cracks, PL black spots, PL scratches, and PL crystal defects.